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this is information on a product in full production. june 2014 docid026401 rev 1 1/18 18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB trench gate field-stop igbt, hb series 650 v, 80 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 1.6 v (typ.) @ i c = 80 a ? tight parameter distribution ? safe paralleling ? low thermal resistance applications ? photovoltaic inverters ? high frequency converters description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. the device is part of the new ?hb? series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 to-3p 1 2 3 tab to-247 long leads c (2 or tab) e (3) g (1) table 1. device summary order code marking package packaging stgw80h65fb gw80h65fb to-247 tube stgwa80h65fb gwa80h65fb to-247 long leads tube STGWT80H65FB gwt80h65fb to-3p tube www.st.com
contents stgw80h65fb, stgwa80h65fb, STGWT80H65FB 2/18 docid026401 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 to-247, stgw80h65fb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-247 long leads, stgwa80h65fb . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 to-3p, STGWT80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid026401 rev 1 3/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 120 (1) 1. current level is limited by bond wires. a i c continuous collector current at t c = 100 c 80 a i cp (2) 2. pulse width limited by ma ximum junction temperature. pulsed collector current 240 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 469 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case 0.32 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgw80h65fb, stgwa80h65fb, STGWT80H65FB 4/18 docid026401 rev 1 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 80 a 1.6 2 v v ge = 15 v, i c = 80 a t j = 125 c 1.8 v ge = 15 v, i c = 80 a t j = 175 c 1.9 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 650 v 100 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 10524 - pf c oes output capacitance - 385 - pf c res reverse transfer capacitance -215-pf q g total gate charge v cc = 520 v, i c = 80 a, v ge = 15 v, see figure 23 -414-nc q ge gate-emitter charge - 78 - nc q gc gate-collector charge - 170 - nc
docid026401 rev 1 5/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 80 a, r g = 10 , v ge = 15 v, see figure 22 -84-ns t r current rise time - 52 - ns (di/dt) on turn-on current slope - 1270 - a/s t d(off) turn-off delay time - 280 - ns t f current fall time - 31 - ns e on (1) 1. energy losses include reverse recovery of the external diode. the diode is the same of the co-packed stgw80h65dfb turn-on switching losses - 2.1 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 1.5 - mj e ts total switching losses - 3.6 - mj t d(on) turn-on delay time v ce = 400 v, i c = 80 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 22 -77-ns t r current rise time - 51 - ns (di/dt) on turn-on current slope - 1270 - a/s t d(off) turn-off delay time - 328 - ns t f current fall time - 30 - ns e on (1) turn-on switching losses - 4.4 - mj e off (2) turn-off switching losses - 2.1 - mj e ts total switching losses - 6.5 - mj
electrical characteristics stgw80h65fb, stgwa80h65fb, STGWT80H65FB 6/18 docid026401 rev 1 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) i c 60 40 20 0 0 1 v ce (v) (a) 4 80 2 3 100 v ge =15v 120 140 9v 11v gipd130920131606fsr i c 60 40 20 0 0 1 v ce (v) (a) 4 80 2 3 100 v ge =15v 120 140 9v 11v 7v gipd160920130919fsr figure 4. transfer characteristics figure 5. collector current vs. case temperature i c 60 40 20 0 6 7 v ge (v) (a) 10 80 8 9 100 t j =175c 120 140 -40c 11 25c v ce =10v gipd160920130924fsr i c 60 40 20 0 025 t j (c) (a) 100 80 50 75 100 120 125 150 v ge = 15 v, t j = 175 c gipd160920130941fsr figure 6. power dissipation vs. case temperature figure 7. v ce(sat) vs. junction temperature p tot 150 100 50 0 025 t j (c) (w) 100 200 50 75 250 300 350 125 150 400 450 v ge = 15 v, t j = 175 c gipd160920130948fsr v ce(sat) 1.8 1.6 1.4 1.2 -50 t j (c) (v) 100 2 050 2.2 2.4 2.6 150 v ge = 15v i c = 160a i c = 80a i c = 40a gipd160920130952fsr
docid026401 rev 1 7/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB electrical characteristics figure 8. v ce(sat) vs. collector current figure 9. forward bias safe operating area v ce(sat) 1.4 1.2 1 0.8 0 i c (a) (v) 60 1.6 20 40 1.8 2 2.2 80 v ge = 15v t j = 175c t j = 25c t j = -40c 2.4 2.6 100 120 140 gipd160920131029fsr i c 100 10 1 0.1 1 v ce (v) (a) 10 100 10s 100s 1ms single pulse tc= 25c, t j 175c v ge = 15v gipd160920131115fsr figure 10. capacitance variations figure 11. normalized v (br)ces vs. junction temperature c 1000 100 10 0.1 v ce (v) (pf) 110 c ies c oes c res 100 10000 gipd160920131200fsr v (br)ces 1.1 1 0.9 -50 t j (c) (norm) 0 50 100 150 i c = 2ma gipd160920131144fsr figure 12. normalized v ge(th) vs. junction temperature figure 13. gate charge vs. gate-emitter voltage v ge 0.8 0.7 0.6 -50 t j (c) (norm) 0 50 100 150 0.9 1 1.1 i c = 1ma gipd160920131151fsr v ge 4 2 0 0q g (nc) (v) 100 200 300 400 6 8 10 12 14 16 i c = 80a v cc = 520v gipd160920131156fsr
electrical characteristics stgw80h65fb, stgwa80h65fb, STGWT80H65FB 8/18 docid026401 rev 1 figure 14. switching loss vs temperature figure 15. switching loss vs gate resistance e 1500 1000 25 t j (c) (j) 50 75 100 125 2000 2500 3000 v cc = 400v, v ge = 15v i c = 80a, r g = 10 150 e off e on 175 0 3500 4000 4500 gipd160920131504fsr e 2600 1800 1000 2r g () (j) 610 14 18 3400 4200 5000 v cc = 400v, v ge = 15v i c = 80a, t j = 175c e on e off gipd160920131208fsr figure 16. switching loss vs collector current figure 17. switching loss vs collector emitter voltage e 2000 1000 0 0 i c (a) (j) 20 40 60 80 3000 4000 5000 v cc = 400v, v ge = 15v r g = 10, t j = 175c 100 120 140 6000 7000 8000 9000 e on e off gipd160920131436fsr e 3000 2000 1000 150 v ce (v) (j) 200 250 300 350 4000 5000 6000 t j = 175c, v ge = 15v i c = 80a, r g = 10 400 e off e on 450 gipd160920131524fsr figure 18. switching times vs. collector current figure 19. switching times vs. gate resistance t 100 10 1 i c (a) (ns) 20 40 60 80 t j = 175c, v ge = 15v v cc = 400v, r g = 10 100 t f t don 120 t r t doff 140 gipd160920131533fsr t 100 10 r g () (ns) 48 t j = 175c, v ge = 15v v cc = 400v, i c = 80a 12 t r t don t f t doff 16 20 gipd160920131539fsr
docid026401 rev 1 9/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB electrical characteristics figure 21. thermal impedance figure 20. collector current vs. switching frequency 40 60 80 100 120 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =10 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c 140 160 gipd260520141426fsr zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
test circuits stgw80h65fb, stgwa80h65fb, STGWT80H65FB 10/18 docid026401 rev 1 3 test circuits figure 22. test circuit for inductive load switching figure 23. gate charge test circuit figure 24. switching waveform am01504v1 am01505v1 k k k k k k am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
docid026401 rev 1 11/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-247, stgw80h65fb figure 25. to-247 drawing 0075325_g
package mechanical data stgw80h65fb, stgwa80h65fb, STGWT80H65FB 12/18 docid026401 rev 1 table 7. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid026401 rev 1 13/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB package mechanical data 4.2 to-247 long leads, stgwa80h65fb figure 26. to-247 long leads drawing 8463846_a_f
package mechanical data stgw80h65fb, stgwa80h65fb, STGWT80H65FB 14/18 docid026401 rev 1 table 8. to-247 long leads mechanical data dim. mm min. typ. max. a4.905.005.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b1.16 1.26 b2 3.25 b3 2.25 c0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e5.345.445.54 l 19.80 19.92 20.10 l1 4.30 p3.503.603.70 q5.60 6.00 s6.056.156.25
docid026401 rev 1 15/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB package mechanical data 4.3 to-3p, STGWT80H65FB figure 27. to-3p drawing 8045950_b
package mechanical data stgw80h65fb, stgwa80h65fb, STGWT80H65FB 16/18 docid026401 rev 1 table 9. to-3p mechanical data dim. mm min. typ. max. a 4.60 4.80 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.70 13.90 14.10 e 15.40 15.60 15.80 e1 13.40 13.60 13.80 e2 9.40 9.60 9.90 e 5.15 5.45 5.75 l 19.80 20 20.20 l1 3.30 3.50 3.70 l2 18.20 18.40 18.60 ?p 3.30 3.40 3.50 ?p1 3.10 3.20 3.30 q 4.80 5 5.20 q1 3.60 3.80 4
docid026401 rev 1 17/18 stgw80h65fb, stgwa80h65fb, STGWT80H65FB revision history 5 revision history table 10. document revision history date revision changes 13-jun-2014 1 initial release.
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